Monika Dhiman

At Indian Institute of Technology Roorkee, I developed controlled CVD routes for silicon and carbon-based thin films on semiconductor, oxide, and metallic substrates. My doctoral research includes crystalline silicon growth for SOI-type structures, graphene growth on Cu, and nanocrystalline diamond films.

I engineered crystalline and epitaxial silicon films using ultra-low-pressure thermal CVD, including direct crystalline silicon growth on amorphous SiO2/Si. This work supports simplified SOI-type structures.

I optimized thermal CVD growth of graphene on Cu by tuning process conditions to control nucleation, domain evolution, and defects. I also developed low-temperature dual-RF ICPECVD growth of nanocrystalline diamond and diamond-like carbon films.

I’ve worked across cleanroom setup and nanofabrication workflows, including EBL and ICP-RIE, and characterized films using techniques such as Raman spectroscopy, X-ray diffraction, and Hall measurements. I’m interested in postdoctoral research at the interface of thin-film synthesis, semiconductor materials, cleanroom device fabrication, nanoelectronics, and functional coatings.